STN1NK80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : SOT-223
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 16000 mOhms


Features:

`TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
`ESD IMPROVED CAPABILITY
`100% AVALANCHE TESTED
`NEW HIGH VOLTAGE BENCHMARK
`GATE CHARGE MINIMIZED


Application

·AC ADAPTORS AND BATTERY CHARGERS
·SWITH MODE POWER SUPPLIES (SMPS)


Specifications

Symbol	Parameter	Value			Unit
		TO-92	SOT-223	DPAK/IPAK
VDS	Drain-source Voltage (VGS = 0)	800			V
VDGR	Drain-gate Voltage (RGS = 20 k)	800			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25°C	0.3	0.25	1.0	A
ID	Drain Current (continuous) at TC = 100°C	0.19	0.16	0.63	A
IDM (`)	Drain Current (pulsed)	5			A
PTOT	Total Dissipation at TC = 25°C	3	2	45	W
	Derating Factor	0.025	0.02	0.36	W /°C
VESD(G-S)	Gate source ESD (HBM-C= 100pF, R= 1.5K)	1000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150			°C

(`) Pulse width limited by safe operating area
(1) I_SD 1 A, di/dt 200 A/s, V_DD 640


Description

The SuperMESH™ series STN1NK80Z is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STN1NK80Z
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	250mA
Rds On (Max) @ Id, Vgs	16 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	160pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	7.7nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STN1NK80Z STN1NK80Z 497 4669 1 ND 49746691ND 497-4669-1