STV160NF02L

Features: ` TYPICAL RDS(on) = 0.0016 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` ULTRA FAST SWITCHING` 100% AVALANCHE TESTED` VERY LOW GATE CHARGE` LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGEApplicationBUCK CONVERTERS IN HIGHPERFORMANCE TELECOM AND VRMs DCDCCONVERTERSP...

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SeekIC No. : 004508980 Detail

STV160NF02L: Features: ` TYPICAL RDS(on) = 0.0016 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` ULTRA FAST SWITCHING` 100% AVALANCHE TESTED` VERY LOW GATE CHARGE` LOW PROFILE, VERY LOW PARASITIC INDUCTA...

floor Price/Ceiling Price

Part Number:
STV160NF02L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.0016
` LOW THRESHOLD DRIVE
` ULTRA LOW ON-RESISTANCE
` ULTRA FAST SWITCHING
` 100% AVALANCHE TESTED
` VERY LOW GATE CHARGE
` LOW PROFILE, VERY LOW PARASITIC
  INDUCTANCE PowerSO-10 PACKAGE



Application

BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DCDC
CONVERTERS



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source voltage ±15 V
ID Drain current (continuous) at TC = 25°C 160 A
ID Drain current (continuous) at TC = 100°C 113 A
IDM Drain current (pulsed) 640 A
PTOT Total dissipation at TC = 25°C 210 W
  Derating factor 1.4 W/°C
EAS Peak diode recovery voltage slope 1.5 mJ
Tj
Tstg
Operating junction temperature
Storage temperature
175
-65 to 175
°C



Description

The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial




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