Features: ` TYPICAL RDS(on) = 0.0016 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` ULTRA FAST SWITCHING` 100% AVALANCHE TESTED` VERY LOW GATE CHARGE` LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGEApplicationBUCK CONVERTERS IN HIGHPERFORMANCE TELECOM AND VRMs DCDCCONVERTERSP...
STV160NF02L: Features: ` TYPICAL RDS(on) = 0.0016 ` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` ULTRA FAST SWITCHING` 100% AVALANCHE TESTED` VERY LOW GATE CHARGE` LOW PROFILE, VERY LOW PARASITIC INDUCTA...
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| Symbol | Parameter | Value | Unit |
| VDS | Drain-source voltage (VGS = 0) | 20 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k) | 20 | V |
| VGS | Gate- source voltage | ±15 | V |
| ID | Drain current (continuous) at TC = 25°C | 160 | A |
| ID | Drain current (continuous) at TC = 100°C | 113 | A |
| IDM | Drain current (pulsed) | 640 | A |
| PTOT | Total dissipation at TC = 25°C | 210 | W |
| Derating factor | 1.4 | W/°C | |
| EAS | Peak diode recovery voltage slope | 1.5 | mJ |
| Tj Tstg |
Operating junction temperature Storage temperature |
175 -65 to 175 |
°C |
The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial