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SiHFB16N50K

Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and Current• Low RDS(on)• Lead (Pb)-free AvailableApplication• Switch Mode Power Supp...

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SeekIC No. : 004491162 Detail

SiHFB16N50K: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

SiHFB16N50K Data Sheet

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Part Number:
SiHFB16N50K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Low RDS(on)
• Lead (Pb)-free Available


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits


Specifications

Parameter Symbol AOTF10N60 Unit
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Avalanche Current C IAR 3.2 A
Continuous Drain
CurrentVGS at 10 V
TC=25
TC=100		 ID 8
5		 A
Pulsed Drain Current a IDM 32 A
Linear Derating Factor   2.3  
Single Pulse Avalanche Energyb EAS 150 mJ
Repetitive Avalanche Currenta IAR   W/
Repetitive avalanche energy a EAR 300 mJ
Peak Diode Recovery dV/dtc dv/dt 5 V/ns
Maximum Power Dissipation TC = 25 PD

50
0.4

 W/
Junction and Storage Temperature Range TJ,Tstg -55 to +150
Soldering Recommendations (Peak Temperature) for 10 s   10 lbf ` in
Mounting Torque 6-32 or M3 screw   1.1 N ` m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 , L = 2.2 mH, RG = 25 , IAS = 17 A.
c. ISD 17 A, dI/dt 500 A/s, VDD VDS, TJ 150 .
d. 1.6 mm from case.


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