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VN0605T

MOSFET 60V 0.18A

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SeekIC No. : 00166474 Detail

VN0605T: MOSFET 60V 0.18A

VN0605T Data Sheet

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Part Number:
VN0605T
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.18 A
Resistance Drain-Source RDS (on) : 5000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-236-3
Resistance Drain-Source RDS (on) : 5000 mOhms
Continuous Drain Current : 0.18 A


Features:

· Low On-Resistance: 2.5 ·
· Low Threshold: <2.1 V
· Low Input Capacitance: 22 pF
· Fast Switching Speed: 7 ns
· Low Input and Output Leakage




Application

· Direct Logic-Level Interface: TTL/CMOS
· Solid State Relays
· Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
· Battery Operated Systems




Specifications

RATING SYMBOL VN10LLS VN0605T VN0610LL VN2222LL UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage-Non-Repetitiveb VGSM ±30 V
Gate-Source Voltage-Continuous VGS ±20 V
Continuous Drain Current(TJ = 150)
TA= 25		 ID 0.32 0.18 0.28 0.23 A
Continuous Drain Current(TJ = 150)
TA= 100		 ID 0.2 0.11 0.17 0.14 A
Pulsed Drain Currenta IDM 1.4 0.72 1.3 1.0 A
Power Dissipation TA= 25 PD 0.9 0.36 0.8 0.8 W
Power DissipationTA= 100 PD 0.4 0.14 0.32 0.32 W
Thermal Resistance, Junction-to-Ambient RthJA 139 350 156 156 °C
Operating Junction and
Storage Temperature Range		 TJ, Tstg 55 to 150 °C





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