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BFY 280

Features: • HiRel Discrete and Microwave Semiconductor• For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA• Hermetically sealed microwave package• fT = 7.2 GHz, F = 2.5 dB at 2 GHz• qualified• ESA/SCC Detail Spec. No.: 5611/006Specific...

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BFY 280: Features: • HiRel Discrete and Microwave Semiconductor• For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA• Hermetically sealed microwave package• ...

BFY 280 Data Sheet

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Part Number:
BFY 280
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• HiRel Discrete and Microwave Semiconductor
• For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA
• Hermetically sealed microwave package
• fT = 7.2 GHz, F = 2.5 dB at 2 GHz
• qualified
• ESA/SCC Detail Spec. No.: 5611/006


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VBE=0 VCES 15 V
Collector-Emitter Voltage VCEO 8 V
Emitter-Base Voltage VEBO 2 V
Base current IB 1.2 1) mA
Collector current IC 10 mA
Total power dissipation
TS 104°C 2)		 Ptot 80 mW
Junction temperature Tj 200
Ambient temperature TA -65 ... +200
Storage temperature Tstg -65 ... +200
Thermal Resistance
Junction - soldering point2) RthJS < 450 K/W

1)The maximum permissible base current for VFBE measurements is 5 mA (spot measurement duration < 1 s).
2)TS   is measured on the collector lead at the soldering point to the pcb.




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