HMNP16MM

Features: ·Access time : 70, 85 and 100ns ·High-density design : 16Mbyte Design ·Battery internally isolated until power is applied ·Unlimited write cycles ·Data retention in the absence of VCC·10-years minimum data retention in absence of power ·Automatic write-protection during power-up/power-do...

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SeekIC No. : 004364747 Detail

HMNP16MM: Features: ·Access time : 70, 85 and 100ns ·High-density design : 16Mbyte Design ·Battery internally isolated until power is applied ·Unlimited write cycles ·Data retention in the absence of VCC·10-y...

floor Price/Ceiling Price

Part Number:
HMNP16MM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

·Access time : 70, 85 and 100ns      
·High-density design : 16Mbyte Design
·Battery internally isolated until power is applied
·Unlimited write cycles
·Data retention in the absence of  VCC
·10-years minimum data retention in absence of power
·Automatic write-protection during power-up/power-down  cycles
·Data is automatically protected during power loss
·Industrial temperature operation 
 



Specifications

PARAMETER
SYMBOL
RATING
UNIT
REMARK
Voltage on any pin relative to Vss
Vin,VCC
-0.5 to 7.0
V
Voltage on Vcc supply relative to Vss
Vcc
-0.5 to 7.0
V
Power Dissipation
Pd
32
W
Storage temperature
TSTG
-65 to 150
Operating Temperature
Ta
0 to 70
K6T4016C3C-B
-40 to 85
K6T4016C3C-F

      NOTE: 
               Permanent device damage may occur if Absolute Maximum Ratings are exceeded.  
               Functional operation should be restricted to the Recommended DC Operating
               Conditions detailed in thisdata sheet.   
               Exposure to higher than recommended voltage for extended periods of time
                could affect device reliability.
                         
 



Description

The HMNP16MM Nonvolatile SRAM is a 16,777,216-byte static RAM organized as 8,388,608 words by 16 bits. The P16MM has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of dard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-tolerance condition. hen such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after V CC s valid and write protection is unconditionally enabled to prevent garbled data. 

In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the egral energy source is switched on to sustain the memory until after V CC returns valid. The HMNP16MM uses extremely low standby current CMOS SRAM°s, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
 




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