IRHE8110

International Rectifier's RAD HARD technolog HEXFETs IRHE8110 demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x10⁶ Rads(Si). Under identical pre- and post-irradiation test ions, In ternational Rectifier's RAD HARD HEXFETs retaiidentical electrical specifications up to 1 x 10⁵ Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHE8110 are also capable of surviving transient ionization es high as 1 x 10¹² Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process lizes International Rectifier's patented HEXFET technology the user can expect the highest quality and reliability in the ustry.

RAD HARD HEXFET transistors IRHE8110 also feature all of the well-established advantages of MOSFETs, suchas voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.