bq4010Y

The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.


The control circuitry constantly of bq4010Y monitors the single 5V supply for an out-of-tolerance condition. When V_CC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation.


At this time the integral energy source of bq4010Y is switched on to sustain the memory until after V_CC returns valid.


The bq4010 uses an extremely low standby current CMOS SRAM,coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the writecycle limitations associated with EEPROM.


The bq4010 requires no external circuitry and is socket-compatible with industry-standard SRAMs and most EPROMs and EEPROMs.