bq4011Y

Features: Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Industry-standard 28-pin 32K x 8 pinout Conventional SRAM operation;unlimited write cycles 10-year minimum data retention in absence of power Battery internally isolated until power is app...

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SeekIC No. : 004301311 Detail

bq4011Y: Features: Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Industry-standard 28-pin 32K x 8 pinout Conventional SRAM operation;unlimited write cycl...

floor Price/Ceiling Price

Part Number:
bq4011Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

Data retention in the absence of power
Automatic write-protection during power-up/power-down cycles
Industry-standard 28-pin 32K x 8 pinout
Conventional SRAM operation;unlimited write cycles
10-year minimum data retention in absence of power
Battery internally isolated until power is applied



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit Conditions
VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V
VT DC voltage applied on any pin excluding VCC
relative to VSS
-0.3 to 7.0 V VT VCC + 0.3
TOPR Operatingtemperature 0 to +70 °C Commercial
-40 to +85   Extended "N"
TSTG Storage temperature -40 to +70 °C Commercial
-40 to +85 °C Extended "N"
TBIAS Temperature under bias -10 to +70 °C Commercial
-40 to +85 °C Extended "N"
TSOLDER Soldering temperature +260 °C For 10 seconds



Description

The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.


The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation.


At this time the integral energy source of bq4011Y is switched on to sustain the memory until after VCC returns valid.


The bq4011 uses an extremely low standby current CMOS SRAM,coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.


The bq4011 requires no external circuitry and is socket-compatible with industry-standard SRAMs and most EPROMs and EEPROMs.




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