bq4015

Features: Data retention for at least 10 yearswithoutpowerAutomatic write-protection during power-up/power-downcyclesConventional SRAM operation,includingunlimitedwritecyclesInternal isolation of battery be fore powerapplicationIndustry standard 32-pin DIP pinout34-pin LIFETIME LITHIUM(TM)module -...

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SeekIC No. : 004301317 Detail

bq4015: Features: Data retention for at least 10 yearswithoutpowerAutomatic write-protection during power-up/power-downcyclesConventional SRAM operation,includingunlimitedwritecyclesInternal isolation of ba...

floor Price/Ceiling Price

Part Number:
bq4015
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Description



Features:

Data retention for at least 10 yearswithoutpower
Automatic write-protection during power-up/power-downcycles
Conventional SRAM operation,includingunlimitedwritecycles
Internal isolation of battery be fore powerapplication
Industry standard 32-pin DIP pinout
34-pin LIFETIME LITHIUM(TM)module
   - Module completely surface-mounted
   - Snap-on power-source for lithium battery backup
   - Replaceable power-source (part number: bq40MS)



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit Conditions
VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V
VT DC voltage applied on any pin excluding VCC
relative to VSS
-0.3 to 7.0 V VT VCC + 0.3
TOPR Operatingtemperature 0 to +70 °C Commercial
-40 to +85   Extended "N"
TSTG Storage temperature -40 to +70 °C Commercial
-40 to +85 °C Extended "N"
TBIAS Temperature under bias -10 to +70 °C Commercial
-40 to +85 °C Extended "N"
TSOLDER Soldering temperature +260 °C For 10 seconds



Description

The CMOS bq4015/Y is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of  tandard SRAM.


The control circuitry of bq4015 constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.


At this time the integral energy source of bq4015 is switched on to sustain the memory until after VCC returns valid.


The bq4015/Y uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EE-PROM.


The bq4015/Y requires no external circuitry and is compatible with the industry-standard 4Mb SRAM pinout.




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