MMBT5550

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Package / Case : SOT-23
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 0.6 A
Collector- Emitter Voltage VCEO Max : 140 V


Features:

NPN Silicon




Specifications

Parameter	Symbol	Rating	Unit
Collector-base voltage	VCBO	140	V
Collector-emitter voltage	VCEO	160	V
Emitter-base voltage	VEBO	6	V
Collector current	IC	600	mA
Total device dissipation FR-5 board *1 @TA = 25 Derate above 25	PD	225 1.8	mW mW/
Thermal resistance, junction-to-ambient	RJA	556	/W
Total device dissipation alumina substrate *2 @TA = 25 derate above 25	PD	300 2.4	mW mW/
Thermal resistance, junction-to-ambient	RJA	417	/W
Junction and storage temperature	TJ,Tstg	-55 to +150

* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina




Parameters:

Technical/Catalog Information	MMBT5550
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	600mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 1mA, 10mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT5550 MMBT5550