12N03LB, 12N60, 12N60C3 Selling Leads, Datasheet
MFG:04+ Package Cooled:TO252-2.5 D/C:Infineon
12N03LB, 12N60, 12N60C3 Datasheet download

Part Number: 12N03LB
MFG: 04+
Package Cooled: TO252-2.5
D/C: Infineon
MFG:04+ Package Cooled:TO252-2.5 D/C:Infineon
12N03LB, 12N60, 12N60C3 Datasheet download

MFG: 04+
Package Cooled: TO252-2.5
D/C: Infineon
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PDF/DataSheet Download
Datasheet: 12N035
File Size: 67243 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 12N035
File Size: 67243 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 12N035
File Size: 67243 KB
Manufacturer:
Download : Click here to Download
The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary,planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.
| Characteristic | Symbol | Value | Units | |
| Drain-source voltage | 12N60-A 12N60-B |
VDSS | 600 650 |
V |
| Gate-source voltage | VGSS | ±30 | V | |
| Pulsed Drain Current (Note 1) | IDM | 48 | A | |
| Continuous Drain Current | ID | 12 | A | |
| Avalanche Energy | Single Pulsed (Note 2) Repetitive (Note 1) |
EAS | 790 | mJ |
| EAR | 24 | mJ | ||
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 4.5 | V/ns | |
| Junction Temperature | TJ | +150 | ||
| Operating Temperature | TOPR | - 55 to +150 | ||
| Storage Temperature | TSTG | - 55 to +150 | ||
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* RDS(ON) = 0.7 @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
