2N2151, 2N2153, 2N2154 Selling Leads, Datasheet
MFG:MOT Package Cooled:2001+ D/C:83
2N2151, 2N2153, 2N2154 Datasheet download

Part Number: 2N2151
MFG: MOT
Package Cooled: 2001+
D/C: 83
MFG:MOT Package Cooled:2001+ D/C:83
2N2151, 2N2153, 2N2154 Datasheet download

MFG: MOT
Package Cooled: 2001+
D/C: 83
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PDF/DataSheet Download
Datasheet: 2N2151
File Size: 71658 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N2000
File Size: 274221 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N2000
File Size: 274221 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifie and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 permits reliable operation in high ambients, an the hermetically sealed package insures maximum reliability and long life.
| SYMBOL | CHARACTERISTIC | VALUE | UNITS |
| VCBO* VCEO* VEBO* |
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
150 100 8 |
V V V |
| IC* IC* IB* |
Peak Collector Current Continuous Collector Current Continuous Base Current |
10 5 2 |
A A A |
| TSTG* TJ* * |
Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. |
-65 to 200 -65 to 200 230 |
|
|
PT* JC |
Power Dissipation TA = 25 TC = 100 Thermal Resistance Junction to Case |
2 30 3.33 |
W |
High Reliability
Greater Gain Stability

