4AM12, 4AM13, 4AM14 Selling Leads, Datasheet
MFG:HITACHI Package Cooled:SIP D/C:08+/09+
4AM12, 4AM13, 4AM14 Datasheet download
Part Number: 4AM12
MFG: HITACHI
Package Cooled: SIP
D/C: 08+/09+
4AM12, 4AM13, 4AM14
- Table of contents:
Info of 4AM12
Info of 4AM13
Info of 4AM14
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About 4am12
PDF/DataSheet Download
Datasheet: 4am12
File Size: 34615 KB
Manufacturer: hitachi
Download : Click here to Download
About 4am13
PDF/DataSheet Download
Datasheet: 4am13
File Size: 34199 KB
Manufacturer: hitachi
Download : Click here to Download
About 4am14
PDF/DataSheet Download
Datasheet: 4am14
File Size: 38611 KB
Manufacturer: hitachi
Download : Click here to Download
4AM12 Maximum Ratings
| Item | Symbol | Rating | Unit | |
| Nch | Pch | |||
| Drain to source voltage | VDSS | 60 | -60 | V |
| Drain to source voltage | VGSS | ±20 | ±20 | V |
| Drain current | ID | 8 | -8 | A |
| Drain peak current | ID(pulse)*1 | 32 | -32 | A |
| Body to drain diode reverse drain current | IDR | 8 | -8 | A |
| Channel dissipation | Pch (Tc = 25)*2 | 28 | W | |
| Channel dissipation | Pch*2 | 4 | W | |
| Channel temperature | Tch | 450 | ||
| Storage temperature | Tstg | 55 to +150 | ||
2. 4 Devices operation
4AM12 Features
` Low on-resistance
N-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 A
P-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
` Discrete packaged devices of same die
N-channel: 2SK971, 2SK1094
P-channel: 2SJ173, 2SJ176
N-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 A
P-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
` Discrete packaged devices of same die
N-channel: 2SK971, 2SK1094
P-channel: 2SJ173, 2SJ176
4AM12 Typical Application
·High speed power switching
4AM13 Maximum Ratings
| Item | Symbol | Rating | Unit | |
| Nch | Pch | |||
| Drain to source voltage | VDSS | 60 | -60 | V |
| Drain to source voltage | VGSS | ±20 | ±20 | V |
| Drain current | ID | 3 | -3 | A |
| Drain peak current | ID(pulse)*1 | 12 | -12 | A |
| Body to drain diode reverse drain current | IDR | 3 | -3 | A |
| Channel dissipation | Pch (Tc = 25)*2 | 28 | W | |
| Channel dissipation | Pch*2 | 4 | W | |
| Channel temperature | Tch | 150 | ||
| Storage temperature | Tstg | 55 to +150 | ||
2. 4 Devices operation
4AM13 Features
` Low on-resistance
N-channel: RDS(on) 0.4 , VGS = 10 V, ID = 1.5 A
P-channel: RDS(on)0.45 , VGS = 10 V, ID = 1.5 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
` Discrete packaged devices of same die
N-channel: 2SK973
P-channel: 2SJ182
N-channel: RDS(on) 0.4 , VGS = 10 V, ID = 1.5 A
P-channel: RDS(on)0.45 , VGS = 10 V, ID = 1.5 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
` Discrete packaged devices of same die
N-channel: 2SK973
P-channel: 2SJ182
4AM13 Typical Application
·High speed power switching
4AM14 General Description
Silicon N Channel/P Channel Complementary Power MOS FET Array
4AM14 Maximum Ratings
| Item |
Symbol |
Nch |
Pch |
Unit |
| Drain to source voltage |
VDSS |
60 |
-60 |
V |
| Gate to source voltage |
VGSS |
±20 |
±20 |
V |
| Drain current |
ID |
8 |
-8 |
A |
| Drain peak current |
ID(pulse)* |
32 |
-32 |
A |
| Bodydrain diode reverse drain current |
IDR |
8 |
-8 |
A |
| Channel dissipation |
Pch (Tc =25°C)** |
32 |
W | |
| Channel dissipation |
Pch** |
4 |
W | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature |
Tstg |
55 to +150 |
** 4 devices operation
4AM14 Features
• Low on-resistance
N-channel: R DS (on) 0.17 , VGS = 10 V
ID = 4 A
P-channel: R DS (on) 0.2 , VGS = 10 V
ID = 4 A
• Capable of 4 V gate drive
• Low drive current
• Hight speed switching
• High density mounting
• Suitable for H-bridged motor driver
• Discrete packaged devices of same die
N-channel: 2SK970 (TO-220AB),
2SK1093 (TO-220FM)
P-channel: 2SJ172 (TO-220AB),
2SJ175 (TO-220FM)
N-channel: R DS (on) 0.17 , VGS = 10 V
ID = 4 A
P-channel: R DS (on) 0.2 , VGS = 10 V
ID = 4 A
• Capable of 4 V gate drive
• Low drive current
• Hight speed switching
• High density mounting
• Suitable for H-bridged motor driver
• Discrete packaged devices of same die
N-channel: 2SK970 (TO-220AB),
2SK1093 (TO-220FM)
P-channel: 2SJ172 (TO-220AB),
2SJ175 (TO-220FM)
4AM14 Typical Application
·High speed power switching
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