Features: * Low on-resistance N Channel: RDS(on) 0.5 W, VGS = 10 V, ID = 2 A P Channel: RDS(on) 0.9 W, VGS = 10 V, ID = 2 A * Low drive current* High speed switching* High density mounting* Suitable for H-bridged motor driverApplicationHigh speed power switchingSpecifications Item Symbol ...
4AM15: Features: * Low on-resistance N Channel: RDS(on) 0.5 W, VGS = 10 V, ID = 2 A P Channel: RDS(on) 0.9 W, VGS = 10 V, ID = 2 A * Low drive current* High speed switching* High density mounting* Suitable...
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| Item |
Symbol |
Ratings |
Unit | |
|
Nch |
Pch | |||
| Drain to source voltage |
VDSS |
200 |
-200 |
V |
| Gate to source voltage |
VGSS |
±20 |
±20 |
V |
| Drain current |
ID |
4 |
-4 |
A |
| Drain peak current |
ID(pulse)*1 |
16 |
16 |
A |
| Body to drain diode reverse drain current |
IDR |
4 |
-4 |
A |
| Channel dissipation |
Pch(Tc = 25)*2 |
32 |
W | |
| Channel dissipation |
Pch*2 |
4.0 |
W | |
| Channel temperature |
Tch |
150 |
C | |
| Storage temperature |
Tstg |
55 to +150 | <||