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60N03S, 60N06, 60N10

Table of contents:
Info of 60N03S
Info of 60N06
Info of 60N10

60N03S, 60N06, 60N10 Selling Leads, Datasheet

MFG:TO-263 Package Cooled:AP D/C:99+

60N03S, 60N06, 60N10 Datasheet download

Five Points

Part Number: 60N03S

MFG: TO-263

Package Cooled: AP

D/C: 99+

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60N06 General Description

The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

60N06 Maximum Ratings

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		V_DSS	60	V
Gate-Source Voltage		V_GSS	±20	V
Continuous Drain Current	T_C = 25°C	I_D	60	A
Continuous Drain Current	T_C = 100°C	I_D	39	A
Pulsed Drain Current (Note 1)		I_DM	120	A
Avalanche Energy	Single Pulsed (Note 2)	E_AS	1000	mJ
Avalanche Energy	Repetitive (Note 1)	E_AR	180	mJ
Total Power Dissipation		P_D	120	W
Junction Temperature		T_J	+175
Storage Temperature		T_STG	-55 ~ +175

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

60N06 Features

* R_DS(ON) = 18m @V_GS = 10 V
* Ultra low gate charge ( typical 39 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 115 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness

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