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60N06

Features: * RDS(ON) = 18m @VGS = 10 V* Ultra low gate charge ( typical 39 nC )* Fast switching capability* Low reverse transfer Capacitance (CRSS= typical 115 pF )* Avalanche energy Specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT ...

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SeekIC No. : 004235027 Detail

60N06: Features: * RDS(ON) = 18m @VGS = 10 V* Ultra low gate charge ( typical 39 nC )* Fast switching capability* Low reverse transfer Capacitance (CRSS= typical 115 pF )* Avalanche energy Specified* Impro...

60N06 Data Sheet

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Part Number:
60N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

* RDS(ON) = 18m @VGS = 10 V
* Ultra low gate charge ( typical 39 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 115 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness




Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current TC = 25°C
ID
60
A
TC = 100°C
39
A
Pulsed Drain Current (Note 1)
IDM
120
A
Avalanche Energy Single Pulsed (Note 2)
EAS
1000
mJ
Repetitive (Note 1)
EAR
180
mJ
Total Power Dissipation
PD
120
W
Junction Temperature
TJ
+175
Storage Temperature
TSTG
-55 ~ +175


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
         Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.




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