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AOB418, AOB420, AOB428

Table of contents:
Info of AOB418
Info of AOB420
Info of AOB428

AOB418, AOB420, AOB428 Selling Leads, Datasheet

MFG:AO Package Cooled:SOT-263 D/C:New

AOB418, AOB420, AOB428 Datasheet download

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Part Number: AOB418

MFG: AO

Package Cooled: SOT-263

D/C: New

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AOB418 General Description

The AOB418 uses advanced trench technology to provide excellent R_DS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specifications). AOB418L is a Green Product ordering option. AOv and AOB418L are electrically identical.

AOB418 Maximum Ratings

Parameter		Symbol	MOSFET	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current ^{B G}	T_A=25°C ^G	I_D	110	A
	T_A=100°C^B		68
Pulsed Drain Current		I_DM	200
Avalanche Current ^C		I_AR	40	A
Repetitive avalanche energy L=0.1mH ^C		E_AR	220	mJ
Power Dissipation ^B	T_A=25°C	P_D	100	W
	T_A=100°C		50
Power Dissipation ^A	T_A=25°C	P_DSM	2.5	W
	T_A=70°C		1.6
Junction and Storage Temperature Range		T_J, T_STG	-55 to 175	°C

AOB418 Features

`V_DS (V) = 30V
`I_D = 110A (V_GS = 10V)
`R_DS(ON) < 6m (V_GS = 10V)
`R_DS(ON) < 7.2m (V_GS = 4.5V)

AOB418 Connection Diagram

AOB420 General Description

The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package.

AOB420 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current ^B,G	TC=25°C ^G	I_D	110	A
	TC=100°C ^B		65
Pulsed Drain Current		I_DM	200
Avalanche Current ^C		I_AR	30	A
Repetitive avalanche energy L=0.1mH ^C		E_AR	120	mJ
Power Dissipation ^B	T_C=25°C	P_D	100	W
	T_C=100°C		50
Power Dissipation ^A	T_A=25°C	P_DSM	3.1	W
	T_A=70°C		2
Junction and Storage Temperature Range		T_J, T_STG	-55 to 175	°C

AOB420 Features

V_DS (V) = 30V
I_D = 110A
R_DS(ON) < 6.5m (V_GS = 10V)
R_DS(ON)< 10.0m (V_GS = 4.5V)

AOB428 General Description

The AOB428 uses advanced trench technology and design to provide excellent R_DS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOB428 is Pb-free (meets ROHS & Sony 259 specifications). AOB428L is a Green Product ordering option. AOB428 and AOB428L are electrically identical.

AOB428 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage Gate-Source Voltage		V_DS V_GS	105 ±25	V V
Continuous Drain Current ^B.G	T_C=25°C T_C=100°C	I_D	40 28	A
Pulsed Drain CurrentC		I_DM	100	A
Avalanche Current^C Repetitive avalanche energy L=0.3mH^C		I_ARE_AR	40 80	A mJ
Power Dissipation ^B	T_C=25°C T_C=100°C	P_D	100 50	W
Power Dissipation ^A	T_A=25°C T_A=70°C	P_DSM	25 1.6	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 175	°C

AOB428 Features

·V_DS (V) = 105V
·I_D = 40A (V_GS = 10V)
·R_DS(ON) < 28mΩ (V_GS= 10V)@ 20A
·R_DS(ON) < 31mΩ (V_GS= 4.5V)

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