BGA2011, BGA2012, BGA2022 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SC70-6 D/C:09+
BGA2011, BGA2012, BGA2022 Datasheet download
Part Number: BGA2011
MFG: PHILIPS
Package Cooled: SC70-6
D/C: 09+
BGA2011, BGA2012, BGA2022
- Table of contents:
Info of BGA2011
Info of BGA2012
Info of BGA2022
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About BGA2011
PDF/DataSheet Download
Datasheet: BGA2011
File Size: 85768 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BGA2012
PDF/DataSheet Download
Datasheet: BGA2012
File Size: 87552 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BGA2022
PDF/DataSheet Download
Datasheet: BGA2022
File Size: 49491 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BGA2011 General Description
Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.
BGA2011 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VS | DC supply voltage | RF input AC coupled | − | 4.5 | V |
| VC | voltage on control pin | − | VS | V | |
| IS | supply current | forced by DC voltage on RF input | − | 30 | mA |
| IC | control current | − | 0.25 | mA | |
| Ptot | total power dissipation | Ts 100 °C | − | 135 | mW |
| Tstg | storage temperature | −65 | +150 | ||
| Tj | operating junction temperature | − | 150 |
BGA2011 Features
• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
BGA2011 Typical Application
• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
BGA2012 General Description
Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.
BGA2012 Features
• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
BGA2012 Typical Application
• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
BGA2022 General Description
Silicon double polyMMICmixer in a 6-lead plastic SOT363 package.
BGA2022 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VS | DC supply voltage | − | 4 | V | |
| IS | voltage on control pin | − | 20 | mA | |
| PLO | oscillator power | note 1 | − | tbf | dBm |
| PRF | RF power | note 1 | − | tbf | dBm |
| Ptot | total power dissipation | Ts tbf °C; note 2 | − | 60 | mW |
| Tstg | storage temperature | −65 | +150 | ||
| Tj | junction temperature | − | 150 |
Notes
1. LO and RF signals always AC coupled; no external DC voltage supplied to pin 1, 2 and 6.
2. Ts is the temperature at the soldering point of the ground tab.
BGA2022 Features
• Large frequency range:
Cellular band (900 MHz)
PCS band (1900 MHz)
WLAN band (2.4 GHz).
• High isolation
• High linearity
• High conversion gain.
Cellular band (900 MHz)
PCS band (1900 MHz)
WLAN band (2.4 GHz).
• High isolation
• High linearity
• High conversion gain.
BGA2022 Typical Application
Receiver side of wireless systems that require high conversion gain and high linearity at low supply current,such as CDMA. Trade-off between gain and intermodulation is determined by one external inductor.
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