BGA2012

Features: • Low current, low voltage• High linearity• High power gain• Low noise• Integrated temperature compensated biasing• Control pin for adjustment bias current.Application• RF front end• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.Descripti...

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SeekIC No. : 004300083 Detail

BGA2012: Features: • Low current, low voltage• High linearity• High power gain• Low noise• Integrated temperature compensated biasing• Control pin for adjustment bias curr...

floor Price/Ceiling Price

Part Number:
BGA2012
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.



Application

• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.



Description

Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier BGA2012 consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.




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