BLF221, BLF241, BLF242 Selling Leads, Datasheet
MFG:PH Package Cooled:07+ D/C:657
BLF221, BLF241, BLF242
- Table of contents:
Info of BLF221
Info of BLF241
Info of BLF242
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About BLF0810-180
PDF/DataSheet Download
Datasheet: BLF0810-180
File Size: 120279 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF0810-180
PDF/DataSheet Download
Datasheet: BLF0810-180
File Size: 120279 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF242
PDF/DataSheet Download
Datasheet: BLF242
File Size: 83081 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF242 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
BLF242 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 1 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 °C | 16 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF242 Features
* High power gain
* Low noise
* Easy power control
* Good thermal stability
* Withstands full load mismatch
* Gold metallization ensures excellent reliability.
* Low noise
* Easy power control
* Good thermal stability
* Withstands full load mismatch
* Gold metallization ensures excellent reliability.
BLF242 Connection Diagram
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