Purchase BLF0810S-180, In-stock BLF0810S-180 From SeekIC.
Part Number: BLF0810S-180
Description: 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
- Table of contents:
BLF0810S-180
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DataSheet
General Description
BLF0810S-180 General Description
180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
BLF0810S-180 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 75 | V | ||
| VGS | gate-source voltage | ±15 | V | ||
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF0810S-180 Features
* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz:
Output power = 30 W
Gain = 16 dB
Efficiency = 27%
ACPR = -46 dBc at 750 kHz and BW = 30 kHz
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (800 to 1000 MHz)
* Internally matched for ease of use.
Output power = 30 W
Gain = 16 dB
Efficiency = 27%
ACPR = -46 dBc at 750 kHz and BW = 30 kHz
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (800 to 1000 MHz)
* Internally matched for ease of use.
BLF0810S-180 Typical Application
* Common source class-AB operation applications in the 860 to 960 MHz frequency range
* CDMA and multicarrier applications.
* CDMA and multicarrier applications.
BLF0810S-180 Connection Diagram
BLF0810S-180
PDF/DataSheet Download
- Datasheet: BLF0810S-180
- File Size: 120279 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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