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BLF0810S-180

Features: * Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz: Output power = 30 W Gain = 16 dB Efficiency = 27% ACPR = -46 dBc at 750 kHz and BW = 30 kHz* Easy power control* Exce...

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BLF0810S-180: Features: * Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz: Output power = 30...

BLF0810S-180 Data Sheet

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Part Number:
BLF0810S-180
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz:
Output power = 30 W
Gain = 16 dB
Efficiency = 27%
ACPR = -46 dBc at 750 kHz and BW = 30 kHz
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (800 to 1000 MHz)
* Internally matched for ease of use.


Application

* Common source class-AB operation applications in the 860 to 960 MHz frequency range
* CDMA and multicarrier applications.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 75 V
VGS gate-source voltage ±15 V
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

180 W LDMOS power transistor BLF0810S-180 for base station applications at frequencies from 800 to 1000 MHz.


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