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Part Number: BLF0810-180

 

 

 

 

Description: 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.


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BLF0810-180 General Description


180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

BLF0810-180 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 75 V
VGS gate-source voltage ±15 V
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF0810-180 Features

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz:
Output power = 30 W
Gain = 16 dB
Efficiency = 27%
ACPR = -46 dBc at 750 kHz and BW = 30 kHz
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (800 to 1000 MHz)
* Internally matched for ease of use.

BLF0810-180 Typical Application

* Common source class-AB operation applications in the 860 to 960 MHz frequency range
* CDMA and multicarrier applications.

BLF0810-180 Connection Diagram

BLF0810-180  Connection Diagram

BLF0810-180 datasheet

BLF0810-180
PDF/DataSheet Download

  • Datasheet: BLF0810-180
  • File Size: 120279 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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