BLF543, BLF544, BLF544B Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-61 D/C:03+
BLF543, BLF544, BLF544B Datasheet download
Part Number: BLF543
MFG: PHILIPS
Package Cooled: TO-61
D/C: 03+
BLF543, BLF544, BLF544B
- Table of contents:
Info of BLF543
Info of BLF544
Info of BLF544B
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About BLF543
PDF/DataSheet Download
Datasheet: BLF543
File Size: 98448 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF544
PDF/DataSheet Download
Datasheet: BLF544
File Size: 120279 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF544B
PDF/DataSheet Download
Datasheet: BLF544B
File Size: 77257 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF543 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
The devices are marked with a VGS indication intended for matched pair applications.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
The devices are marked with a VGS indication intended for matched pair applications.
BLF543 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 2 | A | ||
| Ptot | total power dissipation | up to Tmb =25 °C | 25 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF543 Features
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
BLF543 Connection Diagram
BLF544 General Description
N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange.
A marking code showing gate-source voltage (VGS) information is provided for matched pair applications.
A marking code showing gate-source voltage (VGS) information is provided for matched pair applications.
BLF544 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | ±20 | V | ||
| ID | DC drain current | 3.5 | A | ||
| Ptot | total power dissipation | Tmb 25 °C | 48 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF544 Features
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
BLF544 Typical Application
* Communication transmitters in the UHF frequency range.
BLF544 Connection Diagram
BLF544B General Description
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter
applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
BLF544B Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 2 | A | ||
| Ptot | total power dissipation | Tmb 85 °C | 48 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF544B Features
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
BLF544B Connection Diagram
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