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BLS2731-10, BLS2731-110, BLS31135-50

BLS2731-10, BLS2731-110, BLS31135-50 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:N/A  D/C:N/A

BLS2731-10, BLS2731-110, BLS31135-50 Picture

BLS2731-10, BLS2731-110, BLS31135-50 Datasheet download

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Part Number: BLS2731-10

 

MFG: PHILIPS

Package Cooled: N/A

D/C: N/A

 

 

 
 
 
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About BLS2731-10

PDF/DataSheet Download

Datasheet: BLS2731-10

File Size: 118913 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About BLS2731-110

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Datasheet: BLS2731-110

File Size: 88037 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About BLS1

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Datasheet: BLS1

File Size: 38100 KB

Manufacturer: LITTELFUSE [Littelfuse]

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BLS2731-10 General Description

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange.

BLS2731-10 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 75 V
VCES collector-emitter voltage RBE = 0  75 V
VEBO emitter-base voltage open collector 2 V
ICM peak collector current tp  100 us; 10% 1.5 A
Ptot total power dissipation tp = 100 us;   = 10%; Tmb = 25  145 W
Tstg storage temperature -65 200
Tj operating junction temperature 200
Tsld soldering temperature up to 0.2 mm from ceramic cap; t 10 s 235

BLS2731-10 Features

* Suitable for short and medium pulse applications
* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell geometry improves power sharing and reduces thermal resistance.

BLS2731-10 Typical Application

* Common base class-C pulsed power amplifier for radar applications in the 2.7 to 3.1 GHz band.

BLS2731-10 Connection Diagram

BLS2731-110 General Description

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange.

BLS2731-110 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 75 V
VCES collector-emitter voltage RBE = 0  75 V
VEBO emitter-base voltage open collector 2 V
ICM peak collector current tp  100 us; 10% 1.5 A
Ptot total power dissipation tp = 100 us;   = 10%; Tmb = 25  145 W
Tstg storage temperature -65 200
Tj operating junction temperature 200
Tsld soldering temperature up to 0.2 mm from ceramic cap; t 10 s 235

BLS2731-110 Features

* Suitable for short and medium pulse applications
* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell geometry improves power sharing and reduces thermal resistance.

BLS2731-110 Typical Application

* Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

BLS2731-110 Connection Diagram

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