MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92 D/C:10+
BS250KL-TR1-E3, BS270, BS270-D74Z Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-92
D/C: 10+
Description: MOSFET N-CHANNEL 60V TO-92
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PDF/DataSheet Download
Datasheet: BS20-720X300
File Size: 20695 KB
Manufacturer: VESTAL [Vestal Electronic Devices, LLC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BS270
File Size: 356526 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BS20-720X300
File Size: 20695 KB
Manufacturer: VESTAL [Vestal Electronic Devices, LLC]
Download : Click here to Download
| Technical/Catalog Information | BS270 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 400mA |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 625mW |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-92 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BS270 BS270 |
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
| PARAMETER | Symbol | Value | Unit | |
| Drain-Source Voltage | VDS | -60 | V | |
| Gate-Source Voltage | VGS | ± 20 | ||
| Continuous Drain Current | TA = 25 | ID | −0.27 | A |
| TA = 70 | −0.22 | |||
| Pulse Drain Currenta | IDM | −1.0 | A | |
| Power Dissipation | TA = 25 | PD | 0.8 | W |
| TA = 70 | 0.51 | |||
| Maximum Junction-to-Ambient | RthJA | 156 | /W | |
| Operating and Storage Temperature Range | Tj, TSTG | -55 to +150 | ||
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