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BSH104, BSH105, BSH105.215

BSH104, BSH105, BSH105.215 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOT-23  D/C:09+(ROHS)

BSH104, BSH105, BSH105.215 Picture

BSH104, BSH105, BSH105.215 Datasheet download

Five Points

Part Number: BSH104

 

MFG: PHILIPS

Package Cooled: SOT-23

D/C: 09+(ROHS)

 

 

 
 
 
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  • BSH103

  • Vendor: PHILIPS D/C: 11+& Qty: SOT23  Adddate: 2026-01-03
  • Inquire Now
  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)

About BSH104

PDF/DataSheet Download

Datasheet: BSH104

File Size: 52577 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BSH105 Suppliers

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About BSH105

PDF/DataSheet Download

Datasheet: BSH105

File Size: 149134 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BSH105.215 Suppliers

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  • BSH103

  • Vendor: PHILIPS D/C: 11+& Qty: SOT23  Adddate: 2026-01-03
  • Inquire Now
  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)
  • BSH103

  • Vendor: PHILIPS Pack: SOT D/C: 03+& Qty: 6000  Adddate: 2026-01-03
  • Inquire Now
  • SHENZHEN BINHAI INDUSTRY CO.,LTD   China
    Contact: Mr.chenrongjia   MSN:wind.brsmq@hotmail.com
    Tel: 086-0755-83214027
    Fax: 086-0755-83227110
    (0)

About BSH101

PDF/DataSheet Download

Datasheet: BSH101

File Size: 658780 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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BSH104 General Description

N-channel enhancement mode MOS transistor in a SOT23 SMD package.

BSH104 Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
12
V
VGS
gate-source voltage (DC)
±8
V
ID
drain current (DC)
Ts = 80 °C; note 1
1.1
A
IDM
peak drain current
note 2
4.5
A
Ptot
total power dissipation
Ts = 80 °C
0.5
W
Tamb = 25 °C; note 3
0.75
W
Tamb = 25 °C; note 4
0.54
W
Tstg
storage temperature
-55
+150
°C
Tj
operating junction temperature
-55
+150
°C
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R th a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a R th a-tp (ambient to tie-point) of 90 K/W.

BSH104 Features

· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL, etc.
· Very low threshold.

BSH104 Typical Application

` 'Glue-logic': interface between logic blocks and/or periphery
` Power management
` DC to DC converters
` General purpose switch
` Battery powered applications.

BSH104 Connection Diagram

BSH105 General Description

N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

The BSH105 is supplied in the SOT23 subminiature surface mounting package.

BSH105 Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS

Drain-source voltage

20
V
VDGR
Drain-gate voltage
RGS = 20 k
20
V
VGS
Gate-source voltage
± 8
V
ID
Drain current (DC)
Ta = 25 °C
1.05
A
Ta = 100 °C
0.67
A
IDM
Drain current (pulse peak value)
Ta = 25 °C
4.2
A
Ta = 25 °C
0.417
W
Ta = 100 °C
0.17
W
Ptot
Total power dissipation
Tstg, Tj
Storage & operating temperature
-55
150
°C

BSH105 Features

• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount package

BSH105 Connection Diagram

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