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BSH103

Features: · Very low threshold· High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL etc.Application` Power management` DC to DC converters` Battery powered applications` 'Glue-logic'; interface between logic blocks and/or periphery` General purpose switchPinoutSpecificatio...

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SeekIC No. : 004302134 Detail

BSH103: Features: · Very low threshold· High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL etc.Application` Power management` DC to DC converters` Battery powered applications` 'Gl...

BSH103 Data Sheet

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Part Number:
BSH103
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Very low threshold
· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL etc.


Application

` Power management
` DC to DC converters
` Battery powered applications
` 'Glue-logic'; interface between logic blocks and/or periphery
` General purpose switch


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
30
V
VGS
gate-source voltage (DC)
±8
V
ID
drain current (DC)
Ts = 80 °C; note 1
0.85
A
IDM
peak drain current
note 2
3.4
A
Ptot
total power dissipation
Ts = 80 °C
0.5
W
Tamb = 25 °C; note 3
0.54
W
Tamb = 25 °C; note 4
0.54
W
Tstg
storage temperature
-55
+150
°C
Tj
operating junction temperature
-55
+150
°C
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R th a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a R th a- tp (ambient to tie-point) of 90 K/W.


Description

N-channel enhancement mode MOS transistor BSH103 in a SOT23 SMD package.


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