BSM20GD60DN1E, BSM20GD60DN2, BSM20GP120 Selling Leads, Datasheet
MFG:SIEMENS D/C:07+
BSM20GD60DN1E, BSM20GD60DN2, BSM20GP120 Datasheet download
Part Number: BSM20GD60DN1E
MFG: SIEMENS
Package Cooled:
D/C: 07+
BSM20GD60DN1E, BSM20GD60DN2, BSM20GP120
- Table of contents:
Info of BSM20GD60DN1E
Info of BSM20GD60DN2
Info of BSM20GP120
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About BSM100GAL120DN2
PDF/DataSheet Download
Datasheet: BSM100GAL120DN2
File Size: 83162 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
About BSM20GD60DN2
PDF/DataSheet Download
Datasheet: BSM20GD60DN2
File Size: 126338 KB
Manufacturer: Infineon
Download : Click here to Download
About BSM100GAL120DN2
PDF/DataSheet Download
Datasheet: BSM100GAL120DN2
File Size: 83162 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
BSM20GD60DN2 Maximum Ratings
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage | VCE |
600 |
V |
| Collector-gate voltage RGE = 20 k |
VCGR |
600 | |
| Gate-emitter voltage | VGE |
±20 | |
| DC collector current TC = 40 |
IC |
20 |
A |
| Pulsed collector current, tp = 1 ms TC = 40 |
ICpuls |
40 | |
| Power dissipation per IGBT TC = 25 |
Ptot |
90 |
W |
| Chip temperature | Tj |
+ 150 |
|
| Storage temperature | Tstg |
-55 ... + 150 | |
| Thermal resistance, chip case | RthJC |
1.6 |
K/W |
| Diode thermal resistance, chip case | RthJCD |
1.8 | |
| Insulation test voltage, t = 1min. | Vis |
2500 |
Vac |
| Creepage distance | - |
16 |
mm |
| Clearance | - |
11 | |
| DIN humidity category, DIN 40 040 | - |
F |
sec |
| IEC climatic category, DIN IEC 68-1 | - |
55 / 150 / 56 |
BSM20GD60DN2 Features
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
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