BSM100GB120DN2K

IGBT Modules 1200V 100A DUAL

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SeekIC No. : 00141364 Detail

BSM100GB120DN2K: IGBT Modules 1200V 100A DUAL

floor Price/Ceiling Price

US $ 59.86~66.47 / Piece | Get Latest Price
Part Number:
BSM100GB120DN2K
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~5
  • 5~10
  • Unit Price
  • $66.47
  • $63.16
  • $59.86
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Half Bridge Module
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 145 A Gate-Emitter Leakage Current : 400 nA
Power Dissipation : 700 W Maximum Operating Temperature : + 150 C
Package / Case : Half Bridge1    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : 400 nA
Collector-Emitter Saturation Voltage : 2.5 V
Configuration : Half Bridge Module
Package / Case : Half Bridge1
Power Dissipation : 700 W
Continuous Collector Current at 25 C : 145 A


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate



Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1200
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
145
 
100
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
290
200
Power dissipation, TC = 25 °C
Ptot
700
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg

-55 ... + 150



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