BST72A, BST74A, BST76A Selling Leads, Datasheet
MFG:1289 Package Cooled:TO-92 D/C:07+
BST72A, BST74A, BST76A Datasheet download

Part Number: BST72A
MFG: 1289
Package Cooled: TO-92
D/C: 07+
MFG:1289 Package Cooled:TO-92 D/C:07+
BST72A, BST74A, BST76A Datasheet download

MFG: 1289
Package Cooled: TO-92
D/C: 07+
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PDF/DataSheet Download
Datasheet: BST72A
File Size: 76900 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BST74A
File Size: 65516 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BST76A
File Size: 80155 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.
| Drain-source voltage | VDS | max. | 80V |
| Drain-source voltage (non-repetitive peak; tp 2 ms) | VDS(SM) | 100V | |
| Gate-source voltage (open drain) | VGSO | max. | 20 V |
| Drain current (DC) | ID | max. | 300 mA |
| Drain current (peak) | IDM | max. | 600 mA |
| Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 0.83W |
| Storage temperature range | Tstg | -65 to + 150 | |
| Junction temperature | Tj | max. | 150 |
| THERMAL RESISTANCE | |||
| From junction to ambient (note 1) | Rth j-a | = | 150K/W |
N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
| Drain-source voltage | VDS | max. | 200V |
| Gate-source voltage (open drain) | VGSO | max. | 20 V |
| Drain current (DC) | ID | max. | 250 mA |
| Drain current (peak) | IDM | max. | 800 mA |
| Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 1W |
| Storage temperature range | Tstg | -65 to + 150 | |
| Junction temperature | Tj | max. | 150 |
| THERMAL RESISTANCE | |||
| From junction to ambient (note 1) | Rth j-a | = | 125K/W |
Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm * 10 mm.
N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage (DC) | - | 180 | V | |
| VDS(SM) | drain-source voltage | non-repetitive peak; tp 2 mS | - | 200 | V |
| VGSO | gate-source voltage (DC) | open drain | - | ±20 | V |
| ID | drain current (DC) | - | 300 | mA | |
| IDM | peak drain current | - | 800 | A | |
| Ptot | total power dissipation | Tamb 25 ; note 1 | - | 1 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 |
