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BST120

Features: · Very low RDS(on)· Direct interface to C-MOS· High-speed switching· No second breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) -ID max. 0.3 A Drain current (peak) -IDM max. 0.8 A ...

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SeekIC No. : 004302434 Detail

BST120: Features: · Very low RDS(on)· Direct interface to C-MOS· High-speed switching· No second breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-source voltage (open drain) ±VGS...

BST120 Data Sheet

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Part Number:
BST120
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Very low RDS(on)
· Direct interface to C-MOS
· High-speed switching
· No second breakdown


Specifications

Drain-source voltage -VDS max. 60 V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) -ID max. 0.3 A
Drain current (peak) -IDM max. 0.8 A
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 1 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 125 K/W

Note
1. Transistor mounted on ceramic substrate: area = 2,5 cm2 and thickness = 0,7 mm.




Description

P-channel vertical D-MOS transistor BST120 in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.




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