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MFG:PHILIPS  Package Cooled:SOT-89  D/C:05+/06+  

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Part Number: BST122

 

MFG: PHILIPS

Package Cooled: SOT-89

D/C: 05+/06+

Description: P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and li...


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BST122 General Description


P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology.

BST122 Maximum Ratings

Drain-source voltage -VDS max. 60 V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) -ID max. 0.25 A
Drain current (peak) -IDM max. 0.5 A
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 1 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 125 K/W

Note
1. Transistor mounted on a ceramic substrate: area = 2,5 cm2; thickness = 0,7 mm.

BST122 Features

· Very low RDS(on)
· Direct interface to C-MOS, TTL
· High-speed switching
· No second breakdown

BST122 datasheet

BST122
PDF/DataSheet Download

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