CMPD2003C, CMPD2004, CMPD2004S Selling Leads, Datasheet
MFG:central Package Cooled:Sot-23 D/C:2003
CMPD2003C, CMPD2004, CMPD2004S Datasheet download
Part Number: CMPD2003C
MFG: central
Package Cooled: Sot-23
D/C: 2003
CMPD2003C, CMPD2004, CMPD2004S
- Table of contents:
Info of CMPD2003C
Info of CMPD2004
Info of CMPD2004S
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About CMPD2003C
PDF/DataSheet Download
Datasheet: CMPD2003C
File Size: 112896 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About CMPD2004
PDF/DataSheet Download
Datasheet: CMPD2004
File Size: 81315 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About CMPD2004S
PDF/DataSheet Download
Datasheet: CMPD2004S
File Size: 112896 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
CMPD2003C General Description
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
CMPD2003C Maximum Ratings
|
SYMBOL |
CMPD2003 CMPD2003C CMPD2003S |
CMPD2004 CMPD2004C CMPD2004S |
UNITS | ||
|
Continuous Reverse Voltage |
VR |
200 |
240 |
v | |
|
Peak Repetitive Reverse Voltage |
VRRM |
250 |
300 |
V | |
|
Peak Repetitive Reverse Current |
IO |
200 |
200 |
mA | |
|
Continuous Forward Current |
IF |
250 |
225 |
mA | |
|
Peak Repetitive Forward Current |
IFRM |
625 |
625 |
mA | |
|
Forward Surge Current, tp=1 ms |
IFSM |
4000 |
4000 |
mA | |
|
Forward Surge Current, tp=1 s |
IFSM |
1000 |
1000 |
mA | |
|
Power Dissipation |
PD |
350 |
mW | ||
|
Operating and Storage |
|||||
|
Junction Temperature |
TJ,Tstg |
-65to+150 |
°C | ||
|
Thermal Resistance |
JA |
357 |
°C/W |
CMPD2004 General Description
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
CMPD2004 Maximum Ratings
| SYMBOL | CMPD2003 | CMPD2004 CMPD2004S |
UNITS | ||
| Continuous Reverse Voltage | VR | 200 | 240 | V | |
| Peak Repetitive Reverse Voltage | VRRM | 250 | 300 | V | |
| Peak Repetitive Reverse Current | IO | 200 | 200 | mA | |
| Continuous Forward Current | IF | 250 | 225 | mA | |
| Peak Repetitive Forward Current | IFRM | 625 | 625 | mA | |
| Forward Surge Current, tp=1 s. | IRSM | 4000 | 4000 | mA | |
| Forward Surge Current, tp=1 s | IFSM | 1000 | 1000 | mA | |
| Power Dissipation | PD | 350 | mW | ||
| Operating and Storage | |||||
| Junction Temperature | TJ,Tstg | -65to+150 | °C | ||
| Thermal Resistance | JA | 357 | °C/W |
CMPD2004 Connection Diagram
CMPD2004S General Description
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
CMPD2004S Maximum Ratings
| SYMBOL | CMPD2003 | CMPD2004 CMPD2004S |
UNITS | ||
| Continuous Reverse Voltage | VR | 200 | 240 | V | |
| Peak Repetitive Reverse Voltage | VRRM | 250 | 300 | V | |
| Peak Repetitive Reverse Current | IO | 200 | 200 | mA | |
| Continuous Forward Current | IF | 250 | 225 | mA | |
| Peak Repetitive Forward Current | IFRM | 625 | 625 | mA | |
| Forward Surge Current, tp=1 s. | IRSM | 4000 | 4000 | mA | |
| Forward Surge Current, tp=1 s | IFSM | 1000 | 1000 | mA | |
| Power Dissipation | PD | 350 | mW | ||
| Operating and Storage | |||||
| Junction Temperature | TJ,Tstg | -65to+150 | °C | ||
| Thermal Resistance | JA | 357 | °C/W |
CMPD2004S Connection Diagram
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