CMPD1001S

Packaging :
Product : Switching Diodes
Recovery Time : 50 ns
Forward Voltage Drop : 1 V
Maximum Reverse Leakage Current : 0.1 uA
Operating Temperature Range : - 65 C to + 150 C
Configuration : Dual Parallel
Forward Continuous Current : 0.25 A
Package / Case : SOT-23
Peak Reverse Voltage : 90 V
Maximum Power Dissipation : 0.35 W
Max Surge Current : 6 A


Pinout

Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	90	V
Continuous Forward Current	IF	250	mA
Peak Repetitive Forward Current	IFRM	600	mA
Peak Repetitive Reverse Voltage	IRRM	600	mA
Forward Surge Current, tp=1s	IFSM	6000	mA
Forward Surge Current, tp=1 s	IFSM	1000	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65to+150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.