CMPD2004S

Product : Switching Diodes
Packaging : Reel
Forward Continuous Current : 225 mA
Max Surge Current : 4 A
Recovery Time : 50 ns
Forward Voltage Drop : 1 V
Maximum Reverse Leakage Current : 0.1 uA
Operating Temperature Range : - 65 C to + 150 C
Configuration : Dual Parallel
Package / Case : SOT-23
Peak Reverse Voltage : 240 V
Maximum Power Dissipation : 0.35 W


Pinout

Specifications

	SYMBOL	CMPD2003		CMPD2004 CMPD2004S	UNITS
Continuous Reverse Voltage	VR	200		240	V
Peak Repetitive Reverse Voltage	VRRM	250		300	V
Peak Repetitive Reverse Current	IO	200		200	mA
Continuous Forward Current	IF	250		225	mA
Peak Repetitive Forward Current	IFRM	625		625	mA
Forward Surge Current, tp=1 s.	IRSM	4000		4000	mA
Forward Surge Current, tp=1 s	IFSM	1000		1000	mA
Power Dissipation	PD		350		mW
Operating and Storage
Junction Temperature	TJ,Tstg		-65to+150		°C
Thermal Resistance	JA		357		°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.