CMPD2004C

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Operating Temperature Range :
Package / Case :
Packaging : Reel


Specifications

	SYMBOL	CMPD2003 CMPD2003C CMPD2003S		CMPD2004 CMPD2004C CMPD2004S	UNITS
Continuous Reverse Voltage	VR	200		240	v
Peak Repetitive Reverse Voltage	VRRM	250		300	V
Peak Repetitive Reverse Current	IO	200		200	mA
Continuous Forward Current	IF	250		225	mA
Peak Repetitive Forward Current	IFRM	625		625	mA
Forward Surge Current, tp=1 ms	IFSM	4000		4000	mA
Forward Surge Current, tp=1 s	IFSM	1000		1000	mA
Power Dissipation	PD		350		mW
Operating and Storage
Junction Temperature	TJ,Tstg		-65to+150		°C
Thermal Resistance	JA		357		°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.