CMPD4448, CMPD4448TR, CMPD5001S Selling Leads, Datasheet
MFG:CENTRAL Package Cooled:SOT23 D/C:09+
CMPD4448, CMPD4448TR, CMPD5001S Datasheet download
Part Number: CMPD4448
MFG: CENTRAL
Package Cooled: SOT23
D/C: 09+
CMPD4448, CMPD4448TR, CMPD5001S
- Table of contents:
Info of CMPD4448
Info of CMPD4448TR
Info of CMPD5001S
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About CMPD4448
PDF/DataSheet Download
Datasheet: CMPD4448
File Size: 79697 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About CMP04
PDF/DataSheet Download
Datasheet: CMP04
File Size: 282429 KB
Manufacturer: AD [Analog Devices]
Download : Click here to Download
About CMPD5001S
PDF/DataSheet Download
Datasheet: CMPD5001S
File Size: 80978 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
CMPD4448 General Description
The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.
CMPD4448 Maximum Ratings
| SYMBOL | UNITS | ||
| Continuous Reverse Voltage | VR | 75 | V |
| Continuous Forward Current | IF | 100 | mA |
| Peak Repetitive Forward Current | IFRM | 250 | mA |
| Peak Repetitive Reverse Voltage | IRRM | 50 | mA |
| Forward Surge Current, tp=1ses | IFSM | 4000 | mA |
| Forward Surge Current, tp=1 ses | IFSM | 1000 | mA |
| Power Dissipation | PD | 350 | mW |
| Operating and Storage | |||
| Junction Temperature | TJ,Tstg | -65to+150 | °C |
| Thermal Resistance | JA | 357 | °C/W |
CMPD4448 Connection Diagram
CMPD5001S General Description
The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load applications requiring extremely high current capability.
CMPD5001S Maximum Ratings
| SYMBOL | UNITS | ||
| Continuous Reverse Voltage | VR | 120 | V |
| Continuous Forward Current | IF | 400 | mA |
| Peak Repetitive Forward Current | IFRM | 800 | mA |
| Peak Repetitive Reverse Voltage | IRRM | 600 | mA |
| Forward Surge Current, tp=1s | IFSM | 6000 | mA |
| Forward Surge Current, tp=1 s | IFSM | 1500 | mA |
| Power Dissipation | PD | 350 | mW |
| Operating and Storage | |||
| Junction Temperature | TJ,Tstg | -65to+150 | °C |
| Thermal Resistance | JA | 357 | °C/W |
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