CMPT3019, CMPT3019TR, CMPT3904 Selling Leads, Datasheet
MFG:CENTRAL Package Cooled:05+ D/C:12000
CMPT3019, CMPT3019TR, CMPT3904 Datasheet download
Part Number: CMPT3019
MFG: CENTRAL
Package Cooled: 05+
D/C: 12000
CMPT3019, CMPT3019TR, CMPT3904
- Table of contents:
Info of CMPT3019
Info of CMPT3019TR
Info of CMPT3904
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About CMPT3019
PDF/DataSheet Download
Datasheet: CMPT3019
File Size: 79966 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About CMP04
PDF/DataSheet Download
Datasheet: CMP04
File Size: 282429 KB
Manufacturer: AD [Analog Devices]
Download : Click here to Download
About CMPT3904
PDF/DataSheet Download
Datasheet: CMPT3904
File Size: 102415 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
CMPT3019 General Description
The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications.
CMPT3019 Maximum Ratings
| SYMBOL | UNITS | ||
| Collector-Base Voltage | VCBO | 120 | V |
| Collector-Emitter Voltage | VCEO | 80 | V |
| Emitter-Base Voltage | VEBO | 7.0 | V |
| Collector Current | IC | 500 | A |
| Collector Current(Peak) | ICM | 1.0 | A |
| Power Dissipation | PD | 350 | mW |
| Operating and Storage | |||
| Junction Temperature | TJ,Tstg | -65 to +150 | °C |
| Thermal Resistance | JA | 357 | °C/W |
CMPT3904 General Description
The CENTRAL SEMICONDUCTOR CMPT3904, CMPT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.
CMPT3904 Maximum Ratings
| SYMBOL | CMPT3904 | CMPT3906 | UNITS | ||
| Collector-Base Voltage | VCBO | 60 | 40 | V | |
| Collector-Emitter Voltage | VCEO | 40 | 40 | V | |
| Emitter-Base Voltage | VEBO | 6.0 | 5.0 | V | |
| Continuous Collector Current | IC | 200 | mA | ||
| Power Dissipation | PD | 350 | mW | ||
| Operating and Storage | |||||
| Junction Temperature | Tj, Tstg | -65 to +150 | °C | ||
| Thermal Resistance | JA | 357 | °C/W |
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