FB16B1M1, FB180SA10, FB180SA10P Selling Leads, Datasheet
MFG:fagor Package Cooled:fagor D/C:dc05
FB16B1M1, FB180SA10, FB180SA10P Datasheet download
Part Number: FB16B1M1
MFG: fagor
Package Cooled: fagor
D/C: dc05
FB16B1M1, FB180SA10, FB180SA10P
- Table of contents:
Info of FB16B1M1
Info of FB180SA10
Info of FB180SA10P
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About FB1000
PDF/DataSheet Download
Datasheet: FB1000
File Size: 35482 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FB180SA10
PDF/DataSheet Download
Datasheet: FB180SA10
File Size: 140319 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About FB1000
PDF/DataSheet Download
Datasheet: FB1000
File Size: 35482 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
FB180SA10 General Description
Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT- 227 package contribute to its universal acceptance throughout the industry.
The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT- 227 package contribute to its universal acceptance throughout the industry.
FB180SA10 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 180 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 120 | |
| IDM | Pulsed Drain Current | 720 | |
| PD @TC = 25°C | Power Dissipation | 480 | W |
| Linear Derating Factor | 2.7 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 700 | MJ |
| IAR | Avalanche Current | 180 | A |
| EAR | Repetitive Avalanche Energy | 48 | MJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.7 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
| VISO | Insulation Withstand Voltage (AC-RMS) | 2.5 | kV |
| Mounting torque, M4 srew | 1.3 | N•m |
FB180SA10 Features
Fully Isolated Package
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal Inductance
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal Inductance
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