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Part Number: FB180SA10

 

 

 

D/C: 07+

Description: Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combin...


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FB180SA10 General Description


Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT- 227 package contribute to its universal acceptance throughout the industry.

FB180SA10 Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120
IDM Pulsed Drain Current 720
PD @TC = 25°C Power Dissipation 480 W
  Linear Derating Factor 2.7 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 700 MJ
IAR Avalanche Current 180 A
EAR Repetitive Avalanche Energy 48 MJ
dv/dt Peak Diode Recovery dv/dt 5.7 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150 °C
VISO Insulation Withstand Voltage (AC-RMS) 2.5 kV
  Mounting torque, M4 srew 1.3 N•m

FB180SA10 Features

 Fully Isolated Package
 Easy to Use and Parallel
 Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
 Simple Drive Requirements
 Low Drain to Case Capacitance
 Low Internal Inductance

FB180SA10 datasheet

FB180SA10
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