FB180SA10P

The FB180SA10P is designed as one kind of power MOSFETs with current of 180A. It is the 5th generation, high current density power MOSFET which is paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low on resistance and cost effectiveness.

FB180SA10P has ten features. (1)Fully isolated package. (2)Easy to use and parallel. (3)Very low on-resistance. (4)Dynamic dV/dt rating. (5)Fully avalanche rated. (6)Simple drive requirements. (7)Low drain to case capacitance. (8)Low internal inductance. (9)UL pending. (10)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of FB180SA10P have been concluded into several points as follow. (1)Its continuous drain current at Vgs 10V would be 180A at Tc=25°C and would be 120A at Tc=100°C. (2)Its pulsed drain current would be 720A. (3)Its power dissipation would be 480W. (4)Its linear derating factor would be 2.7W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 700mJ. (7)Its avalanche current would be 180A. (8)Its repetitive avalanche energy would be 48mJ. (9)Its peak diode recovery dV/dt would be 5.7V/ns. (10)Its operating junction and storage temperature range would be from -55°C to 150°C. (11)Its insulation withstand voltage (AC-RMS) would be 2.5kV. (12)Its mounting torque would be 1.3Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of FB180SA10P are concluded as follow. (1)Its drain to source breakdown voltage would be min 100V. (2)Its breakdown voltage temperature coefficient would be typ 0.093V/°C. (3)Its static drain to source on-resistance would be typ 0.0065. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!