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FDS7766, FDS7766S, FDS7779Z

Table of contents:
Info of FDS7766
Info of FDS7766S
Info of FDS7779Z

FDS7766, FDS7766S, FDS7779Z Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:09+

FDS7766, FDS7766S, FDS7779Z Datasheet download

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Part Number: FDS7779Z

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SO-8

D/C: 09+

Description: MOSFET P-CH 30V 16A 8SOIC

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FDS7766 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.

FDS7766 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±16	V
I_D	Drain Current Continuous (Note 1a) Pulsed	17	A
I_D	Drain Current Continuous (Note 1a) Pulsed	60	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS7766 Features

• 17 A, 30 V R_DS(ON) = 5 mΩ @ V_GS = 10 V
R_DS(ON) = 6 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely low R_DS(ON)• High power and current handling capability
• Fast switching

FDS7766 Typical Application

• Synchronous rectifier
• DC/DC converter

FDS7766 Connection Diagram

FDS7766S General Description

The FDS7766S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. The FDS7766S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

FDS7766S Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±16	V
I_D	Drain Current Continuous (Note 1a) Pulsed	17	A
I_D	Drain Current Continuous (Note 1a) Pulsed	60	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS7766S Features

· 17 A, 30 V R_DS(ON) = 5.5 mW @ V_GS= 10 V
R_DS(ON) = 6.5 mW @ V_GS = 4.5 V
· High performance trench technology for extremely low R_DS(ON)
· High power and current handling capability
· Fast switching

FDS7766S Typical Application

· Synchronous rectifier
· DC/DC converter

FDS7766S Connection Diagram

FDS7779Z Parameters

Technical/Catalog Information	FDS7779Z
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	7.2 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	3800pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	98nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7779Z FDS7779Z

FDS7779Z General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON)specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDS7779Z Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±25	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-16	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +175	°C

FDS7779Z Features

• 16 A, 30 V. R_DS(ON) = 7.2 mΩ @ V_GS= 10 V
R_DS(ON) = 11.5 mΩ @ V_GS = 4.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely low R_DS(ON)• High power and current handling capability

FDS7779Z Connection Diagram

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