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FDW256P, FDW258P, FDW2601AZ

Table of contents:
Info of FDW256P
Info of FDW258P
Info of FDW2601AZ

FDW256P, FDW258P, FDW2601AZ Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TSSOP D/C:P0440+

FDW256P, FDW258P, FDW2601AZ Datasheet download

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Part Number: FDW256P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TSSOP

D/C: P0440+

Description: MOSFET P-CH 12V 9A 8-TSSOP

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FDW256P Parameters

Technical/Catalog Information	FDW256P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	13.5 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	2267pF @ 15V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38nC @ 5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW256P FDW256P

FDW256P General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

FDW256P Maximum Ratings

Symbol	Parameter	FDV302P	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±25	V
I_D	Drain Current Continuous (Note 1a) Pulsed	8	A
I_D	Drain Current Continuous (Note 1a) Pulsed	50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.3	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.6	W
T_J,T_STG	Operating and Storage Temperature Range	55 to +150	°C

FDW256P Features

8 A, 30 V

R_DS(ON) = 13.5 m@V_GS = 10 V

R_DS(ON) = 20 m@V_GS = 4.5 V

Extended VGSS range (±25V) for battery applications

High performance trench technology for extremely low RDS(ON)

Low profile TSSOP-8 package

FDW256P Typical Application

Battery protection

DC/DC conversion

Power management

Load switch

FDW256P Connection Diagram

FDW258P Parameters

Technical/Catalog Information	FDW258P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	11 mOhm @ 9A, 4.5V
Input Capacitance (Ciss) @ Vds	5049pF @ 5V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	73nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW258P FDW258P

FDW258P General Description

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive voltage (1.8V 8V).

FDW258P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-12	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current Continuous (Note 1a) Pulsed	9	A
I_D	Drain Current Continuous (Note 1a) Pulsed	50	A
P_D	Total Power Dissipation (Note 1a) (Note 1b)	1.3	W
P_D	Total Power Dissipation (Note 1a) (Note 1b)	0.6	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150

FDW258P Features

9 A, 12 V. R_DS(ON) = 11 m@ V_GS = 4.5 V
R_DS(ON) = 14 m@ V_GS = 2.5 V
R_DS(ON) = 20 m@ V_GS = 1.8 V
Rds ratings for use with 1.8 V logic
Low gate charge
High performance trench technology for extremely low R_DS(ON)
Low profile TSSOP-8 package

FDW258P Typical Application

Load switch
Motor drive
DC/DC conversion
Power management

FDW258P Connection Diagram

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