FDW2503N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.017 Ohms
Package / Case : TSSOP-8
Configuration : Dual Dual Source


Features:

5.5 A, 20 V. R _DS(ON) = 0.021@ V_GS = 4.5 V
                      R _DS(ON) = 0.035@ V_GS = 2.5 V
Extended VGSS range ( ±12V) for battery applications
Low gate charge
High performance trench technology for extremely low R_DS(ON)
Low profile TSSOP-8 package


Application

Load switch
Motor drive
DC/DC conversion
Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	5.5	A
		30
PD	Power Dissipation (Note 1a) (Note 1b)	1.0	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	C

Description

This N-Channel 2.5V specified MOSFET FDW2503N is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).


Parameters:

Technical/Catalog Information	FDW2503N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	21 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1082pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2503N FDW2503N