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FDW2502PZ

MOSFET TSSOP-8 P-CH DUAL

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SeekIC No. : 00166736 Detail

FDW2502PZ: MOSFET TSSOP-8 P-CH DUAL

FDW2502PZ Data Sheet

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Part Number:
FDW2502PZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 4.4 A
Configuration : Dual Dual Source Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TSSOP-8
Packaging : Reel    

Description

Resistance Drain-Source RDS (on) :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.4 A
Package / Case : TSSOP-8
Configuration : Dual Dual Source


Features:

4.4 A, 20 V.RDS(ON) = 0.035 @ VGS = 4.5 V
                           RDS(ON) = 0.057 @ VGS = 2.5 V.
Extended VGSS range (±12V) for battery applications. 
ESD protection diode (note 3). 
High performance trench technology for extremely low RDS(ON) . 
Low profile TSSOP-8 package.



Application

Load switch 
Motor drive 
DC/DC conversion 
Power management



Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current Continuous (Note 1a)
Pulsed		 4.4 A
30
PD Total Power Dissipation (Note 1a)
(Note 1b)		 1.0 W
0.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150



Description

This P-Channel 2.5V specified MOSFET FDW2502PZ is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive voltage (2.5V 12V).


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