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FDW6467, FDW6923, FDW6926

Table of contents:
Info of FDW6467
Info of FDW6923
Info of FDW6926

FDW6467, FDW6923, FDW6926 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TSSOP8

FDW6467, FDW6923, FDW6926 Datasheet download

Five Points

Part Number: FDW6467

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TSSOP8

D/C:

Description: MOSFET P-CH 20V 3.5A 8-TSSOP

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FDW6923 Parameters

Technical/Catalog Information	FDW6923
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	45 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1030pF @ 10V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW6923 FDW6923

FDW6923 General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.

FDW6923 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	- 20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	3.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1)	1.2	W
P_D		1.0	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150

FDW6923 Features

3.5 A, 20 V. R_DS(ON) = 0.045 @ V_GS = 4.5 V
R_DS(ON) = 0.075 @ V_GS= 2.5 V
V_F< 0.55 V @ 1 A
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package

FDW6923 Typical Application

DC/DC conversion

FDW6923 Connection Diagram

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