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FM25C640UVN, FM25C64-G, FM25CL04

Table of contents:
Info of FM25C640UVN
Info of FM25C64-G
Info of FM25CL04

FM25C640UVN, FM25C64-G, FM25CL04 Selling Leads, Datasheet

MFG:Fairchild Package Cooled:1000 D/C:0650+

FM25C640UVN, FM25C64-G, FM25CL04 Picture

FM25C640UVN, FM25C64-G, FM25CL04 Datasheet download

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Part Number: FM25C640UVN

MFG: Fairchild

Package Cooled: 1000

D/C: 0650+

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FM25CL04 General Description

The FM25CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.

In-system operation of the FM25CL04 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM25CL04 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.

These capabilities make the FM25CL04 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1808 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.

FM25CL04 Maximum Ratings

Symbol	Description	Ratings
V_DD	Power Supply Voltage with respect to V_SS	-1.0V to +5.0V
V_IN	Voltage on any pin with respect to V_SS	-1.0V to +5.0V and V < V +1.0V
T_STG	Storage Temperature	-55°C to + 125°C
T_LEAD	Lead Temperature (Soldering, 10 seconds)	300° C

FM25CL04 Features

• Organized as 512 x 8 bits
• Unlimited Read/Write Cycles
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

FM25CL04 Connection Diagram

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