HAF1010RJ, HAF1109IP, HAF1114IB Selling Leads, Datasheet
MFG:RENESAS Package Cooled:SOP-8 D/C:08+
HAF1010RJ, HAF1109IP, HAF1114IB Datasheet download
Part Number: HAF1010RJ
MFG: RENESAS
Package Cooled: SOP-8
D/C: 08+
HAF1010RJ, HAF1109IP, HAF1114IB
- Table of contents:
Info of HAF1010RJ
Info of HAF1109IP
Info of HAF1114IB
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About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF1010RJ General Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
HAF1010RJ Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Drain to source voltage | VDSS | -60 | V |
| Gate to source voltage | VGSS | -16 | V |
| Gate to source voltage | VGSS | 2.5 | V |
| Drain current | ID | -5 | A |
| Drain peak current | ID(pulse) Note1 | -10 | A |
| Body-drain diode reverse drain current | IDR | -5 | A |
| Cannel dissipation | PCh Note 2 | 2.5 | W |
| Cannel temperature | Tch | 150 | |
| Storage temperature | Tstg | -55 ~ 150 |
1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
HAF1010RJ Features
• Logic level operation to (4 to 6 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
• High density mounting
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
• High density mounting
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