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HAF1008(S)

Features: • Logic level operation (-4 to -6 V Gate drive)• High endurance capability against to the short circuit• Builtin the over temperature shutdown circuit• Latch type shutdown operation (Need 0 voltage recovery)Specifications Parameter Symbol Rating Unit Dr...

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SeekIC No. : 004358469 Detail

HAF1008(S): Features: • Logic level operation (-4 to -6 V Gate drive)• High endurance capability against to the short circuit• Builtin the over temperature shutdown circuit• Latch type s...

HAF1008(S) Data Sheet

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Part Number:
HAF1008(S)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Logic level operation (-4 to -6 V Gate drive)
• High endurance capability against to the short circuit
• Builtin the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS -60 V
Gate to source voltage VGSS -16 V
Gate to source voltage VGSS 2.5 V
Drain current ID -20 A
Drain peak current ID (pulse) Note1 -40 A
Body-drain diode reverse drain
current		 IdR -20 A
Channel dissipation PchNote2

50

 W
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
* PW  10ms, duty cycle  1%
2. Value at Tc = 25°C


Description

This HAF1008(S) FET has the over temperature shutdown capability sensing to the junction temperature. This HAF1008(S) FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.




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